Devices having a cavity structure and related methods

ABSTRACT

A structure having a cavity or enclosed space is fabricated by forming a recessed region in a surface of a substrate, and providing a first layer adjacent the recessed region. A liquid mixture including first and second components is supplied to the recessed region. The first component has a higher chemical affinity to the first layer than the second component such that the first component separates from the second component and adheres to an edge portion of the first layer. The substrate may then be heated to remove the second component from the recessed region through evaporation. As a result, the first component remains as a second layer adhering to the edge portion of the first layer and covering the recessed region, thereby defining a cavity or enclosed space with the recessed region. Unique structures including such cavities may be employed to realize a capacitor having a fluid, as opposed to solid, dielectric material, in order to increase the capacitance of the capacitor. Alternatively, such cavities may confine the flow of gases within narrow grooves of a substrate to realize a fuel cell having reduced size.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention is directed toward devices and structures having acavity formed therein and related methods.

2. Background of the Invention

Miniature devices and structures can be fabricated with conventionalsemiconductor processing techniques. These techniques typically involvedepositions of insulative and conductive materials, as well asphotolithography and etching steps, in a desired sequence. The resultingstructure is thus a series of patterned layers, one on top of another.

Many different device structures can be fabricated with conventionalsemiconductor processing techniques. For example, in fabricating amemory cell capacitor, trenches may be formed in a substrate and thenfilled with a desired dielectric material. The top of a trench, however,often cannot simply be covered with a material to form a cavity orenclosed space, because the deposited material fills the bottom andcoats the sides of the trench instead. Accordingly, device structuresincluding cavities or enclosed spaces have been difficult to achievewith conventional semiconductor processing techniques. Such structuresmay be beneficial in obtaining capacitors and fuel cells, for example,having reduced size or improved performance.

SUMMARY OF THE INVENTION

Consistent with an aspect of the present invention, a device is providedwhich comprises a substrate having a recessed surface portion and aprotruding surface portion spaced from the recessed surface portion. Afirst layer including a first material is provided on the protrudingsurface portion, and an edge portion of the first layer is aligned withan edge portion of the protruding surface portion. In addition, a secondlayer including a second material is provided over the recessed surfaceportion. The second layer has an edge portion contacting the edgeportion of the first layer. The first material has a chemical affinitytoward the second material such that the edge portion of the secondlayer adheres to the edge portion of the first layer, the second layerand recessed surface portion defining a cavity.

Consistent with an additional aspect of the present invention, a methodof making a device is provided, which comprises providing a first layerincluding a first material on a surface of a substrate, and removing aportion of the first layer and a corresponding portion of the substrateto form an opening in the first layer and a recessed portion in thesurface of the substrate. The method further comprises supplying aliquid mixture to the opening in the first layer and the recessedportion in the surface of the substrate. The liquid mixture includes afirst component having a first chemical affinity to the first materialand a second component having a second chemical affinity to the firstmaterial, the first chemical affinity being greater than the secondchemical affinity. In addition, the method includes removing the secondcomponent and forming a second layer including the first component. Thesecond layer covers the recessed portion and adheres to an edge portionof the first layer adjacent the opening in the first layer. The secondlayer and the recessed portion define a cavity.

Consistent with a further aspect of the present invention, an electronicdevice is provided which comprises a substrate. A first conductive layeris provided on the substrate, and an insulative layer is provided on theconductive layer. In addition, a second conductive layer provided on theinsulative layer, and a first layer including a first material isprovided on the second conductive layer. A cavity extends through thefirst layer, the first conductive layer, and the insulative layer. Asecond layer is also provided, such that an edge portion of the secondlayer contacts an edge portion of the first layer. The second layerincludes a second material having a chemical affinity toward the firstmaterial so that the second layer adheres to the first layer. Further, afluid, having a higher dielectric constant than a dielectric constant ofthe insulative layer, is provided in the cavity.

Consistent with an additional aspect of the present invention, a methodof manufacturing an electronic device is provided in which a firstconductive layer is provided on a substrate, and an insulative layer isprovided on the first conductive layer. The method also includesproviding a second conductive layer on the insulative layer, andproviding a first layer including a first material on the secondconductive layer. In addition, the method includes etching a portion ofthe first layer, a portion of the second conductive layer and a portionof the insulative layer to form a recessed region, and supplying aliquid mixture to the recessed region. The liquid mixture includes afirst component having a first chemical affinity to the first materialand a second component having a second chemical affinity to the firstmaterial, the first chemical affinity being greater than the secondchemical affinity. Moreover, the method includes removing the secondcomponent, and forming a second layer including the first component. Thesecond layer covers the recessed region and adheres to an edge portionof the first layer adjacent to the opening in the first layer. Thesecond layer and the recessed region define a cavity. The method alsoincludes supplying a dielectric liquid to the cavity, the dielectricfluid having a dielectric constant greater than a dielectric constantassociated with the insulative layer.

Consistent with a further aspect of the present invention, a fuel cellis provided which comprises a substrate, as well as an anode electrodeand a cathode electrode formed on first and second portions,respectively, of the substrate. A third portion of the substrate isprovided between the first and second portions. A polymer electrolytemembrane is provided on the third portion of the substrate, and a firstfilm having a sidewall surface is provided on the anode electrode. Inaddition, a second film having a sidewall surface is provided on thecathode electrode. A first porous layer is provided adjacent a firstside of the polymer electrolyte membrane and is spaced from the sidewallsurface of the first film, and a second porous layer is providedadjacent a second side of the polymer electrolyte membrane and is spacedfrom the sidewall surface of the second film. Moreover, a first recessedregion is defined by the first porous layer and the sidewall of thefirst film, and a second recessed region is defined by the second porouslayer and the sidewall of the second film. A first layer is provided onthe first film, and a second layer is provided over the first recessedregion. The second layer has a chemical affinity toward the first layersuch that an edge portion of the second layer adheres to an edge portionof the first layer. Further, a third layer is provided on the secondfilm, and a fourth layer is provided over the second recessed region.The fourth layer has a chemical affinity toward the third layer suchthat an edge portion of the fourth layer adheres to an edge portion ofthe second layer.

Consistent with another aspect of the present invention, a method ofmaking a fuel cell is provided which comprises depositing a conductivelayer on a substrate, and patterning the conductive layer to form ananode electrode and a cathode electrode. The method also includesproviding a first porous layer on the anode electrode and a secondporous layer on the cathode electrode, and providing a polymerelectrolyte membrane between the first and second porous layer. Inaddition, the method includes depositing a film on the substrate aboutthe first and second porous layers, and depositing a first layerincluding a first material on the film. The method further includesetching the film to form a first sidewall surface spaced from the firstporous layer and a second sidewall surface spaced from the second porouslayer. The first sidewall surface and the first porous layer define afirst recessed region and the second sidewall surface and the secondporous layer define a second recessed region. Moreover, the methodincludes etching the first layer to form a first opening incorrespondence with the first recessed region and a second opening incorrespondence with the second recessed region, and supplying a liquidmixture to the first and second recessed regions. The liquid mixtureincludes a first component having a first chemical affinity to the firstmaterial and a second component having a second chemical affinity to thefirst material less than the first chemical affinity. The method alsoincludes removing the second component to form a second layer over thefirst recessed region and a third layer over the second recessed regionsuch that an edge of the second layer adheres to a first edge of thefirst layer and an edge of the third layer adheres to a second edge ofthe first layer.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory onlyand are not restrictive of the invention, as claimed.

The accompanying drawings, which are incorporated in and constitute apart of this specification, illustrate embodiments of the invention andtogether with the description, serve to explain the principles of theinvention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1(a)-1(i) illustrate process steps in manufacturing a deviceconsistent with an aspect of the present invention;

FIGS. 2(a)-2(l) illustrate process steps in manufacturing a capacitorconsistent with an additional aspect of the present invention;

FIGS. 3(a)-3(t) illustrate process steps in manufacturing a fuel cellconsistent with a further aspect of the present invention; and

FIG. 4 is illustrates structures consistent with the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

A structure having a cavity or enclosed space is fabricated by forming arecessed region in a surface of a substrate, and providing a trap orfirst layer adjacent the recessed region. A liquid mixture includingfirst and second components is supplied to the recessed region. Thefirst component has a higher chemical affinity to the trap layer thanthe second component such that the first component separates from thesecond component and adheres to an edge portion of the trap layer. Thesubstrate may then be heated, and the second component is removed fromthe recessed region through evaporation. As a result, the firstcomponent remains as a dried film or second layer adhering to the edgeportion of the trap layer and covering the recessed region, therebydefining a cavity or enclosed space within the recessed region.Structures including such cavities may be employed to realize acapacitor having a fluid, as opposed to solid, dielectric material,thereby increasing the capacitance of the capacitor. Alternatively, suchcavities may confine the flow of gases within narrow grooves of asubstrate to realize a fuel cell having reduced size.

Reference will now be made in detail to the present exemplaryembodiments of the invention, examples of which are illustrated in theaccompanying drawings. Wherever possible, the same reference numberswill be used throughout the drawings to refer to the same or like parts.

FIGS. 1(a)-1(i) illustrate process steps in manufacturing a device 140(see FIG. 1(i)) consistent with an aspect of the present invention. Asseen in FIG. 1(a), a substrate 100 is first provided, upon which a firstlayer 102 is deposited (FIG. 1(b)). First layer 102, also referred toherein as a trap layer, may include a first material, such as siliconnitride (SiN), fluorine doped silicate glass, silicon oxynitride, anorgano-metallic compound, silicon carbide (SiC). First layer 102 may bedeposited by chemical vapor deposition or by any other conventionalprocess. A photoresist layer 104 is next provided on first layer 102,and then patterned, as shown in FIG. 1(c). Reactive ion etching or otherconventional etching, as represented by arrows 106, is next carried out(FIG. 1(d)) to form openings 116 in first layer 102. Such etching alsoresults in recessed surface portions 108, and protruding surfaceportions 110 of substrate 100 (FIG. 1(e)). In addition, edge portions112 of first layer 102 are aligned with edge portions 114 of protrudingsurface portions 110.

In FIG. 1(f), a liquid mixture 118 is supplied to each of recessedsurface portions 108. Liquid mixture 118 includes a first component 120having a first chemical affinity to first layer 102 and a secondcomponent 122 having a second chemical affinity to first layer 102. Thefirst chemical affinity is typically greater than the second chemicalaffinity such that first component 120 separates from second component122 in mixture 118 and adheres to edge portions 112 of first layer 102.By way of example, first layer 102 may be hydrophilic, in which casefirst component 120 is preferably also hydrophilic and second component122 is hydrophobic. Alternatively, first layer 102 may be hydrophobic,in which case first component 120 is preferably hydrophobic while secondcomponent 122 is hydrophilic.

The first (120) and second (122) components are typically selected basedon the choice of first layer 102. For example, if first layer 102includes silicon nitride, first component 120 may be an acidic nitridederivative and second component 122 may be water. Alternatively, iffirst layer 102 includes an organo-metallic material, such astetramethylsilane, first component 120 may include cellular fiber,carbon particles or carbon fibers, and second component 122 may includean alcohol.

When substrate 100 is heated sufficiently, for example, in a dry gasflow or low power plasma, as represented by arrows 124 in FIG. 1(g),second component 122 is removed from recessed surface portions 108through evaporation. In addition, first component 120 dries to formsecond layers 126, each including the dried first component as a secondmaterial. After the heating step, second layers 126 remain attached oradhering to edge portions 112 of first layer 102 (FIG. 1(h)) due to therelatively strong chemical affinity between first layer 102 and secondlayers 126. Accordingly, cavities 128 are formed and defined by recessedsurface portions 108 and second layers 126. As further shown in FIG.1(i), a third layer 130, constituting a cap or protective layer andincluding an insulative material, such as silicon oxide or siliconnitride, is next formed over the first (102) and second (126) layers ina conventional manner to thereby complete device 140.

As noted above, cavity structures may be provided in capacitors toincrease the capacitance thereof, consistent with a further aspect ofthe present invention. A process for fabricating an exemplarymetal-insulator-metal (MIM) capacitor in accordance with an aspect ofthe present invention will next be described with reference to FIGS.2(a)-2(l). As shown in FIG. 2(a), a first conductive layer 202 isdeposited on a substrate 200 in a conventional manner. First conductivelayer 202 may be any metal or conductive material suitable as a lowerbase metal electrode of the MIM capacitor. Examples of such conductivematerials or metals include copper or an aluminum copper (AlCu) alloys.In FIG. 2(b), an insulative layer 204 including an oxide, e.g., siliconoxide, or a known inter-metal dielectric is next provided on substrate204. A second conductive layer 206 is then provided on first insulativelayer 204, and patterned in a conventional manner. Second conductivelayer 206, which ultimately forms an upper metal electrode of the MIMcapacitor, may be formed of the same metal or conductive material asfirst conductive layer 202.

As further shown in FIG. 2(b), an insulative layer 208 is deposited, andlayers 206 and 208 are subject to chemical mechanical polishing (notshown) to yield a substantially planar surface, upon which a first layer210 is deposited. First layer 210 is formed of a similar material and isdeposited in a similar fashion as first layer 102 discussed above.Preferably, first layer 210 adheres to second conductive layer 206.

Next, in FIG. 2(c), a photoresist layer 212 is provided on first layer210, and then patterned through a known photolithography step. Anetching step, such as reactive ion etching, is then carried out, asrepresented by arrows 214 in FIG. 2(d) to remove portions of first layer210, second conductive layer 206, insulative layer 204, and firstconductive layer 202. As a result, recessed regions or cavities 216 areformed which extend through layers 210, 206, and 204 and into firstconductive layer 202 (FIG. 2(e)). In FIG. 2(f), a fluid mixture 218 isnext supplied to recessed regions 216. Fluid mixture 218 includes first(220) and second (222) components, which, as discussed above, separatedue to their different chemical affinities to first layer 210. Thesubstrate is then heated, as represented by arrows 224 in FIG. 2(g) sothat, in a manner similar to that further discussed above with respectto FIG. 1(g), second component 222 is removed through evaporation (FIG.2(h)). In addition, first component 220 dries to form second materiallayers, i.e., second layers 226, which remain attached to correspondingedge portions (e.g., edge portion 210-1) of first layer 210.

A third layer 230, typically including an insulative material, is nextprovided on first (210) and second (226) layers in FIG. 2(i). Thirdlayer 230 preferably serves as a cap or protective layer. An additionalprotective layer 240 may also be formed on third layer 230. In FIG.2(j), first (232) and second (234) vias are formed in layers 210, 230,and 240. First via 232 further extends through insulative layers 204 and208 to first conductive layer 202, and second via 234 extends to secondconductive layer 206. Third (236) and fourth (238) conductive layers areprovided in vias 232 and 234, respectively. Third (236) and fourth (238)conductive layers are thus electrically coupled to first (202) andsecond (206) conductive layers, respectively.

Next, in FIG. 2(k), a photoresist layer 242 is provided on layer 240 andupper-most portions of conductive layers 236 and 238, and then patternedto expose portions of layer 240. The exposed portions of layer 240 andcorresponding portions of layer 230 are then etched. Such etching alsoremoves corresponding second layers 226 to provide access to cavities216 through inlet opening 244 and outlet opening 246 (FIG. 2(l)). Theexposed portions of layer 240 may be in a serpentine or other patternsuch that, after etching, cavities 216 are interconnected in such a wayas to permit the flow of fluid or gas therein. A dielectric fluid suchas carbon fluoride may then be dispensed through a microtube 252, whichmay include, for example, a pipette. The dielectric fluid flowing intocavities 216 (represented by arrow 248) passes through inlet opening 244to one of cavities 216. If cavities 216 are interconnected, thedielectric fluid can be supplied to each cavity through a single inletopening 244. Excess dielectric fluid (as represented by arrow 250) flowsout through outlet opening 246, which is in communication with acorresponding one of cavities 216. The completed MIM capacitor 260 isshown in FIG. 2(l).

The dielectric fluid discussed above may be either in liquid or gaseousform and may be a high-k dielectric fluid have a higher dielectricconstant than that of insulative layer 208 or substrate 200. Inaddition, by using a liquid or gas dielectric fluid, flexible capacitordesigns, which are not limited to conventional structures based on soliddielectric materials, can be achieved.

As further noted above, cavity structures consistent with the presentinvention may be also be implemented in a fuel cell. Such a fuel celland related manufacturing method in accordance with further aspects ofthe present invention will next be described with reference to FIGS.3(a)-(t).

In FIG. 3(a) a substrate 300 is provided which may include a platecoated with a layer of silicon oxide. An etch stop layer 302, includingsilicon nitride or other suitable etch resistant material is nextdeposited on substrate 300, followed by deposition of metal layer 304,which may include, for example, copper, silver, gold or platinum (FIG.3(b)). A catalyst layer 306 for decomposing hydrogen in the completedfuel cell is next provided on metal layer 304. Catalyst layer 306 mayinclude platinum, for example, if the underlying metal layer 304 is notpreviously formed of platinum.

Next, in FIG. 3(d), an additional etch stop layer 308, may be made ofthe same material as etch stop layer 302, is formed on catalyst layer306, followed by successive depositions of glass layers 310-1 and 310-2.Glass layers 310-1 and 310-2 may include boro-phosphosilicate glass orphosphosilicate glass with a non-uniform doping profile. For example,the concentration of boron and/or phosphorus in glass layers 310-1 and310-2 may increase from a lower portion to a top portion of each layer.Alternatively, the doping concentration may decrease from top to bottomwithin each layer. A cap or protective layer 312 is next formed on glasslayer 310-2 (FIG. 3(e)).

In FIG. 3(f), a photoresist layer 316 is formed and patterned, andlayers 312, 310-1, and 310-2 are etched by reactive ion etching or othersuitable etching process, as represented by arrows 314. Layers 312,310-1, and 310-2, patterned after such etching, are shown in FIG. 3(g).

First (319) and second (318) films are next deposited, as shown in FIG.3(h). Films 318 and 319 are typically silicon oxide films deposited in ahigh density plasma (HDP) process. Films 318 and 319 are next masked bya patterned photoresist layer 322, which exposes a portion of cap layer312. In FIG. 3(i), portions of cap layer 312, glass layers 310-1 and310-2, etch stop layer 308, catalyst layer 306, and metal layer 304 aretypically first anisotropically etched, by reactive ion etching, forexample, and then subjected to an isotropic etch with a wet etchant suchas hydrofluoric acid, such etching operations being represented byarrows 320. The anisotropic etch forms opening 328, and the isotropicetch further etches glass layers 310-1 and 310-2, but has little effecton layers 312, 308, 306, and 304 (FIG. 3(j)). Since, as noted above, thedoping concentration within each of layers 310-1 and 310-2 isnon-uniform, portions of the layers having less dopant etch at adifferent rate than those portions having a higher dopant concentration.Thus, some portions of layers 310-1 and 310-2 are etched through toadjacent films 318 and 319 while other portions remain substantiallyintact, such that the resulting layers 324 and 326 have a porousstructure with a plurality of openings, such as openings 329.

As further shown in FIG. 3(j), opening 328 divides metal layer 304 intoan anode electrode 304-2 and a cathode electrode 304-1. Anode electrode304-2 and cathode electrode 304-1 are provided over first (330) andsecond (332) portions, respectively, of substrate 300. A third portion334 is provided beneath space 328 between first portion 330 and secondportion 332.

In FIG. 3(k), a polymer electrolyte membrane (PEM) 336 is provided inopening 328. PEM 336 typically includes microscopic spheres in a gelsuspension. The gel suspension may be mixed with water in order to fillopening 328, after which the gel may be dried.

A first layer 338 is next deposited on films 318 and 319, as well as PEM336, as shown in FIG. 3(l). First layer 338 may include those materialsthat form first layer 102 discussed above. In FIG. 3(m), a photoresistlayer 340 is provided on first layer 308 and patterned by conventionalphotolithography to expose portions of first layer 338, preferably in aserpentine or similar shape. Reactive ion etching or anotherconventional etching process, as represented by arrows 342, is carriedout in FIG. 3(n) to remove portions of first layer 338, film 318, film319, and etch stop layer 308. As a result, recessed regions 352, 354,344, 346, 356, and 358 are formed (FIG. 3(o)), as well as patternedfilms 318-1 to 318-3, and 319-1 to 319-3. Preferably, these recessedregions are interconnected due to the patterning of the exposed portionsof first layer 338. As further shown in FIG. 3(o), openings 348 and 350expose portions of PEM 336 to first recessed region 344 and secondrecessed region 346, respectively.

In FIG. 3(p), a liquid mixture 364 is provided in recessed regions 352,354, 344, 346, 356, and 358. Liquid mixture 364, like liquid mixture 318discussed above, includes first (370) and second (368) components. Firstcomponent 370 has a higher chemical affinity to first layer 338 thansecond component 368, and is thus drawn toward and adheres to firstlayer 338 in a manner similar to that discussed above in regard to firstcomponent 120. Next, in FIG. 3(q) heat is applied (as discussed above inconnection with FIG. 1(g)), as represented by arrows 372, to dry secondcomponent 368 to form second layers 374 (FIG. 3(r)). Second layers 374are similar to second layers 126 discussed above. As a result, secondlayers 374 adhere to corresponding edges of first layer 338. Forexample, an edge portion 374-1 of layer 374-a adheres to edge portion338-a of layer portion 338-b, and edge portion 338-2 of layer portion338-b (constituting a third layer) is adhered to by edge portion 374-2of layer 374-b (constituting a fourth layer).

A cap or protective layer is next deposited as layer 376, which includesan insulative material (FIG. 3(s)). Lastly, in FIG. 3(t), openings areformed in third layer 376 to permit the flow of gaseous hydrogen (H₂,represented by arrow 378) into recessed region 352 and gaseous oxygen(O₂, represented by arrow 380) into recessed region 358. Preferably,recessed regions 346, 356, and 358 are interconnected, as noted above,and collectively constitute a groove, which confines and directs theoxygen to recessed region 346. Recessed region 346 is bounded or definedby sidewall 360 of film portion 318-1, second layer 374-b and porouslayer 326. As noted above, openings 350 in porous layer 326 exposeportions of PEM 336 to recessed region 346. Likewise, recessed region344 is bounded or defined by sidewall 362, second layer 374-a, andporous layer 324. Openings 348 in porous layer 324 expose other portionsof PEM 336 to recessed region 344. Completed fuel cell 390 is shown inFIG. 3(t).

In operation, hydrogen gas is supplied to regions of PEM 366 exposed byopenings 348 in porous layer 324. Catalyst layer 306 adjacent porouslayer 324 interacts with the hydrogen to yield protons and electrons.The protons migrate through openings 348 of porous layer 324, passthrough PEM 336, and reach recessed region 346. Meanwhile, the electronsform an electrical current that flows from anode 304-2 to cathode 304-1.This electrical current flow has a corresponding voltage which can beused to drive a desired circuit (not shown). In recessed region 346, theelectrons combine with the protons and the oxygen to form water, whichcan be removed by flushing additional oxygen gas, for example, throughrecessed region 346.

Fuel cell 390 may be manufactured using semiconductor processingtechniques, such as photolithography, and thus can be made relativelysmall. Moreover, fuel cell 390 can be integrated onto a semiconductorchip so that the chip is self-powered, thereby obviating the need for anexternal power supply.

FIG. 4 illustrating exemplary structures consistent with the presentinvention. Namely, FIG. 4 shows a recessed surface portion 400 providedin a substrate 402. A plurality of protruding surface portions 404, madeof silicon for example, are provided in the recessed surface portion400, and a first layer 406 is provided on each protruding surfaceportion 404.

Although a hydrogen-based fuel cell is described above, other fuel cellsare contemplated involving other input materials, such as methanol.Moreover, the cavity or recessed region structures discussed above areapplicable to other devices in addition to capacitors and fuel cells.

Other embodiments of the invention will be apparent to those skilled inthe art from consideration of the specification and practice of theinvention disclosed herein. It is intended that the specification andexamples be considered as exemplary only, with a true scope and spiritof the invention being indicated by the following claims.

1. A device comprising: a substrate having a recessed surface portionand a protruding surface portion spaced from the recessed surfaceportion; a first layer including a first material disposed on theprotruding surface portion, an edge portion of the first layer beingaligned with an edge portion of the protruding surface portion; and asecond layer including a second material disposed over the recessedsurface portion, the second layer having an edge portion contacting theedge portion of the first layer, the first material having a chemicalaffinity toward the second material such that the edge portion of thesecond layer adheres to the edge portion of the first layer, the secondlayer extending over the recessed surface portion.
 2. A device inaccordance with claim 1, further comprising a third layer, the thirdlayer extending over the first layer and the second layer.
 3. A devicein accordance with claim 1, wherein the first layer includes siliconnitride and the second layer includes an acidic nitride derivative.
 4. Adevice in accordance with claim 1, wherein the first layer includes anorgano-metallic compound and the second layer includes carbon particles.5. A device according to claim 4, wherein the organo-metallic compoundincludes tetramethylsilane.
 6. A device according to claim 1, furtherincluding a third material in the cavity having a dielectric constantgreater than a dielectric constant associated with the substrate.
 7. Anelectronic device, comprising: a substrate; a first conductive layerdisposed on the substrate; an insulative layer disposed on theconductive layer; a second conductive layer disposed on the insulativelayer; a first layer including a first material disposed on the secondconductive layer, a recessed region extending through the first layer,the first conductive layer, the second conductive layer, and theinsulative layer; a second layer disposed over the recessed region, anedge portion of the second layer contacting an edge portion of the firstlayer, the second layer including a second material having a chemicalaffinity toward the first material such that the second layer adheres tothe first layer; and a fluid provided in the recessed region, the fluidhaving a higher dielectric constant than a dielectric constant of theinsulative layer.
 8. An electronic device in accordance with claim 7,wherein the electronic device is a capacitor.
 9. An electronic device inaccordance with claim 7, wherein a first opening extends through theinsulative layer and overlies a portion of the first conductive layer,and a second opening extends through the first layer and overlies aportion of the second conductive layer, the electronic device furthercomprising: a third conductive layer disposed in the first opening, thethird conductive layer being electrically coupled to the firstconductive layer; and a fourth conductive layer disposed in the secondopening, the fourth conductive layer being electrically coupled to thesecond conductive layer.
 10. An electronic device in accordance withclaim 7, further comprising: a third conductive layer constituting afirst electrical connection to the first conductive layer; and a fourthconductive layer constituting a second electrical connection to thesecond conductive layer.
 11. An electronic device in accordance withclaim 7, wherein said insulative layer is a first insulative layer, saidelectronic component further comprising a second insulative layeroverlying the first and second layers.
 12. An electronic device inaccordance with claim 7, wherein the first material is selected from thegroup consisting of silicon nitride, fluorine doped silicate glass,silicon oxynitride, an organo-metallic compound, and silicon carbide.13. An electronic device in accordance with claim 7, wherein the firstmaterial is silicon nitride and the second material includes an acidicnitride derivative.
 14. An electronic device in accordance with claim 7,wherein the first material is an organo-metallic compound and the secondmaterial includes carbon particles.
 15. A device according to claim 1,wherein the first material is selected from the group consisting ofsilicon nitride, fluorine doped silicate glass, silicon oxynitride, anorgano-metallic compound, and silicon carbide.
 16. A device according toclaim 7, wherein the first material is selected from the groupconsisting of silicon nitride, fluorine doped silicate glass, siliconoxynitride, an organo-metallic compound, and silicon carbide.
 17. A fuelcell, comprising: a substrate; an anode electrode disposed on a firstportion of the substrate; a cathode electrode disposed on a secondportion of the substrate spaced from the anode electrode, a thirdportion of the substrate being disposed between the first and secondportions of the substrate; a polymer electrolyte membrane disposed onthe third portion of the substrate; a first film disposed on the anodeelectrode, the first film having a sidewall surface; a second filmdisposed on the cathode electrode, the second film having a sidewallsurface; a first porous layer disposed adjacent a first side of thepolymer electrolyte membrane and being spaced from the sidewall surfaceof the first film; a second porous layer disposed adjacent a second sideof the polymer electrolyte membrane and being spaced from the sidewallsurface of the second film; a first recessed region being defined by thefirst porous layer and the sidewall of the first film; a second recessedregion being defined by the second porous layer and the sidewall of thesecond film; a first layer disposed on the first film; a second layerdisposed over the first recessed region and having a chemical affinitytoward the first layer such that an edge portion of the second layeradheres to an edge portion of the first layer; a third layer disposed onthe second film; and a fourth layer disposed over the second recessedregion and having a chemical affinity toward the third layer such thatan edge portion of the fourth layer adheres to an edge portion of thesecond layer.
 18. A fuel cell in accordance with claim 17, wherein thefirst and second porous layers include a plurality of openingsconfigured to expose portions of the polymer electrolyte membrane to thefirst and second recessed portions.
 19. A fuel cell in accordance withclaim 17, further comprising a first groove formed in the first film anda second groove formed in the second film, the first recessed regionconstituting a part of the first groove and the second recessed regionconstituting part of the second groove.
 20. A fuel cell in accordancewith claim 19, wherein the first groove is configured to receive a firstgas and the second groove is configured to receive a second gas.
 21. Afuel cell in accordance with claim 20, wherein the first gas is hydrogenand the second gas is oxygen.